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  to-126 plastic-encapsulate transistors 2sc1162 transistor (npn) features low frequency power amplifier maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-emitter voltage 35 v v ceo collector-emitter voltage 35 v v ebo emitter-base voltage 5 v i c collector current -continuous 2.5 a pc collector power dissipation 1 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp max u nit collector-base breakdown voltage v (br)cbo i c =1ma,i e =0 35 v collector-emitter breakdown voltage v (br)ceo i c =10ma,i b =0 35 v emitter-base breakdown voltage v (br)ebo i e =1ma ,i c =0 5 v collector cut-off current i cbo v cb =35v,i e =0 20 a emitter cut-off current i ebo v eb =5v,i c =0 20 a h fe1 v ce =2v,i c =0.5a 60 320 dc current gain h fe2 v ce =2v,i c =1.5a * 20 collector-emitter saturation voltage v ce(sat) i c =2a,i b =200ma 1 v base-collector voltage v be v ce =2v,i c =1.5a 1.5 v transition frequency f t v ce =2v,i c =200ma 180 mhz * pulse test classification of h fe1 rank b c d range 60-120 100-200 160-320 to-126 1. emitter 2. collecotr 3. base 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,feb,2013


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